spn3402 description applications the spn3402 is the n-channel logic enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration ( sot-23-3l ) part marking ? 30v/2.8a,r ds(on) = 58m ? @v gs =10v ? 30v/2.3a,r ds(on) = 65m ? @v gs =4.5v ? 30v/1.5a,r ds(on) = 105m ? @v gs =2.5v ? super high density cell design for extremely low r ds (on) ? exceptional on-resistance and maximum dc current capability ? sot-23-3l package design product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPN3402S23RG sot-23-3l a2yw SPN3402S23RGb sot-23-3l a2yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPN3402S23RG : tape reel ; pb ? free SPN3402S23RGb : tape reel ; pb ? free; halogen - free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 30 v gate ?source voltage v gss 12 v t a =25 4.0 continuous drain current(t j =150 ) t a =70 i d 2.8 a pulsed drain current i dm 10 a continuous source current(diode conduction) i s 1.25 a t a =25 1.25 power dissipation t a =70 p d 0.8 w operating junction temperature t j 150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 100 /w spn3402 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 30 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 0.8 1.6 v gate leakage current i gss v ds =0v,v gs =12v 100 na v ds =24v,v gs =0.0v 1 zero gate voltage drain current i dss v ds =24v,v gs =0.0v t j =55 10 ua v ds R 4.5v,v gs =10v 6 on-state drain current i d(on) v ds R 4.5v,v gs =4.5v 4 a v gs = 10v,i d =2.8a 0.048 0.058 v gs =4.5v,i d =2.3a 0.053 0.065 drain-source on-resistance r ds(on) v gs =2.5v,i d =1.5a 0.080 0.105 ? forward transconductance gfs v ds =4.5v,i d =2.8a 4.6 s diode forward voltage v sd i s =1.25a,v gs =0v 0.82 1.2 v dynamic total gate charge q g 4.2 6 gate-source charge q gs 0.6 gate-drain charge q gd v ds =15,v gs =4.5v i d 2.0a 1.5 nc input capacitance c iss 350 output capacitance c oss 55 reverse transfer capacitance c rss v ds =15,v gs =0v f =1mhz 41 pf t d(on) 2.5 turn-on time t r 2.5 t d(off) 20 turn-off time t f v dd =15,r l =10 ? v gen =10v,r g =3 ? 4 ns spn3402 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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